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IRFB4229PBF Power Mosfet module PDP SWITCH N-Channel MOSFET Transistor

Categories Power Mosfet Transistor
Brand Name: Anterwell
Model Number: IRFB4229PBF
Certification: new & original
Place of Origin: original factory
MOQ: 20pcs
Price: Negotiate
Payment Terms: T/T, Western Union, Paypal
Supply Ability: 9000pcs
Delivery Time: 1 day
Packaging Details: Please contact me for details
Gate-to-Source Voltage: ±30 V
Pulsed Drain Current: 180 A
Repetitive Peak Current: 91 A
Linear Derating Factor: 2.2 W/°C
Operating Junction and Storage Temperature: -40 to + 175°C
Soldering Temperature for 10 seconds: 300°C
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    IRFB4229PBF Power Mosfet module PDP SWITCH N-Channel MOSFET Transistor


    PDP SWITCH IRFB4229PbF

    Features

    • Advanced Process Technology

    • Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications

    • Low EPULSE Rating to Reduce Power Dissipation in PDP Sustain,

    Energy Recovery and Pass Switch Applications

    • Low QG for Fast Response

    • High Repetitive Peak Current Capability for Reliable Operation

    • Short Fall & Rise Times for Fast Switching

    • 175°C Operating Junction Temperature for Improved Ruggedness

    • Repetitive Avalanche Capability for Robustness and Reliability


    Key Parameters

    VDS min250V
    VDS (Avalanche) typ.300V
    RDS(ON) typ. @ 10V38
    IRP max @ TC= 100°C91A
    TJ max175°C


    Description

    This HEXFET® Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch applications in Plasma Display Panels. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area and low EPULSE rating. Additional features of this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for PDP driving applications.


    Absolute Maximum Ratings

    ParameterMax.Units
    VGSGate-to-Source Voltage±30V
    ID @ TC = 25°CContinuous Drain Current, VGS @ 10V46A
    ID @ TC = 100°CContinuous Drain Current, VGS @ 10V33A
    IDMPulsed Drain Current180A
    IRP @ TC = 100°CRepetitive Peak Current91A
    PD @TC = 25°CPower Dissipation330W
    PD @TC = 100°CPower Dissipation190W
    Linear Derating Factor2.2W/°C
    TJ TSTGOperating Junction and Storage Temperature Range-40 to + 175°C
    Soldering Temperature for 10 seconds300°C
    Mounting Torque, 6-32 or M3 Screw10lbin (1.1Nm)N

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