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RoHS Dual N Channel Mosfet Power Transistor SOT-23-6L MOSFETS 6.0 A VDSS

Categories Mosfet Power Transistor
Place of Origin: ShenZhen China
Brand Name: OTOMO
Certification: RoHS、SGS
MOQ: 1000-2000 PCS
Price: Negotiated
Packaging Details: Boxed
Delivery Time: 1 - 2 Weeks
Payment Terms: L/C T/T Western Union
Supply Ability: 18,000,000PCS / Per Day
Model Number: 8205A
Product name: Mosfet Power Transistor
VDSS: 6.0 A
APPLICATION: Power Management
FEATURE: Low Gate Charge
Power mosfet transistor: SOT-23-6L Plastic-Encapsulate
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    RoHS Dual N Channel Mosfet Power Transistor SOT-23-6L MOSFETS 6.0 A VDSS

    8205A SOT-23-6L Plastic-Encapsulate MOSFETS Dual N-Channel MOSFET


    General Description


    VDSS= V ID= 6.0 A

    z 20

    G1

    6

    D1,D2

    5

    G2

    4

    z

    RDS(on) < Ω@V = 4.5V

    25m

    GS

    z

    RDS(on) < Ω@V = 2.5V

    32m

    GS

    1 2 3

    S1

    D1,D2 S2


    FEATURE


    z TrenchFET Power MOSFET

    z Excellent RDS(on)

    z Low Gate Charge

    z High Power and Current Handing Capability

    z Surface Mount Package


    APPLICATION


    z Battery Protection

    z Load Switch

    z Power Management


    Parameter Symbol Test Condition Min Typ Max Unit
    STATIC CHARACTERICTISCS
    Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =250µA 19 V
    Zero gate voltage drain current IDSS VDS =18V,VGS = 0V 1 µA
    Gate-body leakage current IGSS VGS =±10V, VDS = 0V ±100 nA
    Gate threshold voltage (note 3) VGS(th) VDS =VGS, ID =250µA 0.5 0.9V
    Forward tranconductance (note 3) gFS VDS =5V, ID =4.5A 10 S
    Diode forward voltage (note 3) VSD IS=1.25A, VGS = 0V 1.2 V

    DYNAMIC CHARACTERICTISCS (note4)
    Input Capacitance Ciss 800 pF
    Output Capacitance Coss VDS =8V,VGS =0V,f =1MHz 155 pF
    Reverse Transfer Capacitance Crss 125 pF

    SWITCHING CHARACTERICTISCS (note 4)
    Turn-on delay time td(on) 18 ns
    Turn-on rise time tr VDD=10V,VGS=4V, 5 ns
    Turn-off delay time td(off) ID=1A,RGEN=10Ω 43 ns
    Turn-off fall time tf 20 ns
    Total Gate Charge Qg 11 nC
    Gate-Source Charge Qgs VDS =10V,VGS =4.5V,ID=4A 2.3 nC
    Gate-Drain Charge Qgd 2.5 nC

    Notes :

    1. Repetitive rating:Pluse width limited by maximum junction temperature

    2. Surface Mounted on FR4 board,t≤10 sec.

    3. Pulse test : Pulse width≤300μs, duty cycle≤2%.

    4. Guaranteed by design, not subject to production.



    SOT-23-6L Package Outline Dimensions



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