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Gallium Arsenide (GaAs)

Gallium Arsenide (GaAs)

Country/Region china

Company Advanced Engineering Materials Limited

Categories High Temperature Air Source Heat Pump

Update 2019-07-13 16:35:33

ICP License Issued by the Chinese Ministry

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Gallium Arsenide (GaAs) has high electron mobility. The GaAs substrate commonly applied in the filed of light emitting diodes, laser diodes, photovoltaic devices, high electron mobility transistor and heterojunction bipolar transistor.

Physical Properties

Growth MethodVGF
Lattice (A)a=5.653
Melting point1238℃
Density(g/cm3)5.31 g/cm3
Doped MaterialSi-doped / Zn-doped/ undoped
TypeN-type/P-type/ Semi-insulating
Carrier concentration (cm-3)5 x 1017
EPD (Average)<5 x 105/cm2


Size25mmx25mm, 10mmx10mm, 10mmx5mm, 5mmx5mm
PolishedSSP or DSP
Orientation<100>,<110>, <111>
Redirection precision0.5°
Angle of crystallineSpecial size and orientation are avaiable for request
Surface roughness (Ra:)<5


100 clean bag, 1000 exactly clean room

Product Tags:

led displays


laser diodes

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