Sign In | Join Free | My benadorassociates.com
benadorassociates.com
Products
Search by Category
Home > RAMs >

FM25V02-G Electronic IC Chips 256Kb Serial 3V F-RAM Memory

Categories Electronic IC Chips
Brand Name: Anterwell
Model Number: FM25V02-G
Certification: new & original
Place of Origin: original factory
MOQ: 20pcs
Price: Negotiate
Payment Terms: T/T, Western Union, Paypal
Supply Ability: 7600pcs
Delivery Time: 1 day
Packaging Details: Please contact me for details
Power Supply Voltage: 2.0 to 3.6 V
Standby Current: 90 μA
Sleep Mode Current: 5 μA
Input Leakage Current: ±1 μA
Output Leakage Current: ±1 μA
Storage Temperature: -55°C to + 125°C
  • Haven't found right suppliers
  • Our buyer assistants can help you find the most suitable, 100% reliable suppliers from China.
  • And this service is free of charge.
  • we have buyer assistants who speak English, French, Spanish......and we are ready to help you anytime!
Submit Buying Request
  • Product Details
  • Company Profile

FM25V02-G Electronic IC Chips 256Kb Serial 3V F-RAM Memory


FM25V02

256Kb Serial 3V F-RAM Memory


Features

256K bit Ferroelectric Nonvolatile RAM

  • Organized as 32,768 x 8 bits
  • High Endurance 100 Trillion (1014) Read/Writes
  • 10 Year Data Retention
  • NoDelay™ Writes
  • Advanced High-Reliability Ferroelectric Process

Very Fast Serial Peripheral Interface - SPI

  • Up to 40 MHz Frequency
  • Direct Hardware Replacement for Serial Flash
  • SPI Mode 0 & 3 (CPOL, CPHA=0,0 & 1,1)

Write Protection Scheme

  • Hardware Protection
  • Software Protection

Device ID and Serial Number

  • Device ID reads out Manufacturer ID & Part ID
  • Unique Serial Number (FM25VN02)

Low Voltage, Low Power

  • Low Voltage Operation 2.0V – 3.6V
  • 90 μA Standby Current (typ.)
  • 5 μA Sleep Mode Current (typ.)

Industry Standard Configurations

  • Industrial Temperature -40℃ to +85℃
  • 8-pin “Green”/RoHS SOIC Package
  • 8-pin “Green”/RoHS TDFN Package

Description

The FM25V02 is a 256-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes like a RAM. It provides reliable data retention for 10 years while eliminating the complexities, overhead, and system level reliability problems caused by Serial Flash and other nonvolatile memories.


Unlike Serial Flash, the FM25V02 performs write operations at bus speed. No write delays are incurred. Data is written to the memory array immediately after it has been transferred to the device. The next bus cycle may commence without the need for data polling. The product offers very high write endurance, orders of magnitude more endurance than Serial Flash. Also, F-RAM exhibits lower power consumption than Serial Flash.


These capabilities make the FM25V02 ideal for nonvolatile memory applications requiring frequent or rapid writes or low power operation. Examples range from data collection, where the number of write cycles may be critical, to demanding industrial controls where the long write time of Serial Flash can cause data loss.


The FM25V02 provides substantial benefits to users of Serial Flash as a hardware drop-in replacement. The devices use the high-speed SPI bus, which enhances the high-speed write capability of F-RAM technology. The FM25VN02 is offered with a unique serial number that is read-only and can be used to identify a board or system. Both devices incorporate a read-only Device ID that allows the host to determine the manufacturer, product density, and product revision. The devices are guaranteed over an industrial temperature range of -40°C to +85°C.


Absolute Maximum Ratings

SymbolDescriptionRatings
VDDPower Supply Voltage with respect to VSS-1.0V to +4.5V
VINVoltage on any pin with respect to VSS-1.0V to +4.5V and VIN < VDD+1.0V
TSTGStorage Temperature-55°C to + 125°C
TLEADLead Temperature (Soldering, 10 seconds)260°C
VESD

Electrostatic Discharge Voltage

- Human Body Model (AEC-Q100-002 Rev. E)

- Charged Device Model (AEC-Q100-011 Rev. B)

- Machine Model (AEC-Q100-003 Rev. E)


1kV

1.25kV

200V

Package Moisture Sensitivity LevelMSL-1

Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only, and the functional operation of the device at these or any other conditions above those listed in the operational section of this specification is not implied. Exposure to absolute maximum ratings conditions for extended periods may affect device reliability.


Pin Configuration


Stock Offer (Hot Sell)

Part No.QuantityBrandD/CPackage
FDN358P58000FAIRCHILD16+SOT-23
FDN5630-NL83000FAIRCHILD16+SOT-23
FDPF14N305507FAIRCHILD09+TO-220F
FDS36725282FAIRCHILD14+SOP-8
FDS4435BZ16331FAIRCHILD15+SOP-8
FDS4935BZ9357FAIRCHILD14+SOP-8
FDS657620788FAIRCHILD13+SOP-8
FDS6681Z6161FAIRCHILD13+SOP-8
FDS6699S20859FAIRCHILD13+SOP-8
FDS897818516FAIRCHILD09+SOP-8
FDS9431A9728FAIRCHILD13+SOP-8
FDS9945-NL9799FAIRCHILD12+SOP-8
FDV301N12000FSC16+SOT23-5
FDV304P86000FAIRCHILD15+SOT-23
FEP16DT8008VISHAY11+TO-220
FEP16GT12410FSC16+TO-220
FERD30M45CT6132ST15+TO-220AB
FES16JT12481VISHAY13+TO-220
FGA25N120ANTD5228FSC15+TO-3P
FGH40N60SMDF5808FAIRCHILD16+TO-247
FGH40N60UFD8213FAIRCHILD15+TO-247
FGH60N60SFD4835FAIRCHILD13+SOP-8
FGH60N60UFD4764FSC16+TO-247
FGL40N120AND7142FAIRCHILD16+TO-264
FJE3303H2TU14485FAIRCHILD07+TO-126
FLZ2V2A20000FSC15+LL34
FLZ3V6A7000FSC12+LL34
FM18W08-SGTR4627CYPRESS11+SOP-28
FM24CL64B-GTR1578CYPRESS16+SOP-8
FM24W256-GTR7533CYPRESS14+SOP-8

Buy FM25V02-G Electronic IC Chips 256Kb Serial 3V F-RAM Memory at wholesale prices
Send your message to this supplier
 
*From:
*To: Anterwell Technology Ltd.
*Subject:
*Message:
Characters Remaining: (0/3000)
 
Inquiry Cart 0