| Sign In | Join Free | My benadorassociates.com |
|
| Sign In | Join Free | My benadorassociates.com |
|
| Categories | GaAs Wafer |
|---|---|
| Brand Name: | zmsh |
| Model Number: | GaAs-001 |
| Certification: | no |
| Place of Origin: | china |
| MOQ: | 5pcs |
| Price: | by case |
| Supply Ability: | 1000pcs/month |
| Delivery Time: | 1-4weeks |
| Packaging Details: | 25pcs casstle in 100-grade cleaning room |
| material: | GaAs single crystal substrates |
| industry: | semicondutor wafer |
| application: | semiconductor substrate, led chip, optical glass window,device substrates |
| method: | VFG |
| size: | 2-6inch commen |
| Company Info. |
| SHANGHAI FAMOUS TRADE CO.,LTD |
| Verified Supplier |
| View Contact Details |
| Product List |
2inch GaAs substrates, GaAs wafer for led,Gallium Arsenide crystal Wafers,Si/Zn Dopant GaAs wafer(A compound of the elements gallium and arsenic. It is a III-V direct bandgap semiconductor with a zinc blende crystal structure)
--------------------------------------------------------------------------------------------------------------
Application:
1. Mainly used in electronics, low temperature alloys, Gallium Arsenide.
2. The primary chemical compound of gallium in electronics, is used in microwave circuits, high-speed switching circuits, and infrared circuits.
3. Gallium Nitride and Indium Gallium Nitride, for semiconductor uses, produce blue and violet light-emitting diodes (LEDs) and diode lasers.
Specification
Parameter | Guaranteed / Actual Values | UOM | |
| Growth Method: | VGF | ||
| Conduct Type: | S-I-N | ||
| Dopant: | Undoped | ||
| Diameter: | 50.8± 0.1 | mm | |
| Orientation: | (100)± 0.50 | ||
| OF location/length: | EJ [ 0-1-1]± 0.50/16±1 | ||
| IF location/length: | EJ [ 0-1 1 ]± 0.50/7±1 | ||
| Resistivity: | Min: 1.0 E8 | Max: 2.2 E8 | Ω·cm |
| Mobility: | ＞2000 | cm2/v.s | |
| EPD: | ＜1500 | / cm2 | |
| Thickness: | 350± 20 | µm | |
| Edge Rounding: | 0.25 | mmR | |
| Laser Marking: | N/A | ||
| TTV/TIR: | Max: 10 | µm | |
| BOW: | Max: 10 | µm | |
| Warp: | Max: 10 | µm | |
| Partical Count: | ＜50/wafer(for particle>0.3um) | ||
| Surface Finish– front: | Polished | ||
| Surface Finish –back: | Etched | ||
| Epi-Ready: | Yes | ||
| Parameter | Customer’s Requirements | Guaranteed / Actual Values | UOM | ||
| Growth Method: | VGF | VGF | |||
| Conduct Type: | S-C-P | S-C-P | |||
| Dopant: | GaAs-Zn | GaAs-Zn | |||
| Diameter: | 50.8± 0.4 | 50.8± 0.4 | mm | ||
| Orientation: | (100)± 0.50 | (100)± 0.50 | |||
| OF location/length: | EJ [ 0-1-1]± 0.50/16±1 | EJ [ 0-1-1]± 0.50/16±1 | |||
| IF location/length: | EJ [ 0-1 1 ]± 0.50/7±1 | EJ [ 0-1 1 ]± 0.50/7±1 | |||
| Ingot CC: | Min: 1 E19 | Max: 5 E19 | Min: 1.4 E19 | Max: 1.9 E19 | /cm3 |
| Resistivity: | Min: N/A | Max: N/A | Min: N/A | Max: N/A | Ω·cm |
| Mobility: | Min: N/A | Max: N/A | Min: N/A | Max: N/A | cm2/v.s |
| EPD: | Max: 5000 | Min: 600 | Max: 700 | / cm2 | |
| Thickness: | 350±25 | 350±25 | µm | ||
| Surface Finish– front: | Polished | Polished | |||
| Surface Finish –back: | Etched | Etched | |||
| Epi-Ready: | Yes | Yes | |||
FAQ –
Q: What you can supply logistics and cost?
(1) We accept DHL, Fedex, TNT, UPS, EMS, SF and etc.
(2) If you have your own express number, it's great.
If not, we could assist you to deliver. Freight=USD25.0(the first
weight) + USD12.0/kg
Q: What's the delivery time?
(1) For the standard products such as ball lens, powell lens and
collimator lens:
For inventory: the delivery is 5 workdays after order.
For customized products: the delivery is 2 or 3 workweeks after
order.
(2) For the off-standard products, the delivery is 2 or 6 workweeks
after you place the order.
Q: How to pay?
T/T, Paypal, West Union, MoneyGram, Secure payment and Trade
Assurance on and etc..
Q: What's the MOQ?
(1) For inventory, the MOQ is 5pcs.
(2) For customized products, the MOQ is 5pcs-20pcs.
It depends on quantity and technics
Q: Do you have inspection report for material?
We can supply detail report for our products.
Packaging – Logistcs
Worldhawk concerns each details of the package , cleaning,
anti-static , shock treatment .
According to the quantity and shape of the product , we will take a different packaging process!
|
GaAs Laser Epitaxial Wafer Gallium Arsenide Wafer VCSEL/PD Expitaxial Wafer For Intelligent Sensing
Double Side Polished Semicondutor Wafer 1sp 2sp 10X10mm GGG Crystal Substrate Chips
0.5mm Thickness Gallium Arsenide Wafer Zinc Oxide Crystal Substrate
Transparent Orange Undopped GaP Wafers P Type N Type 200um 350um 5G Light Emitting
GaP Semi-Insulated Wafers P Type N Type 400um 500um Green LED Red Green Light Emission
3inch 76.2mm N-Type S Doped Gallium Arsenide Wafer For Microelectronics
N-Type / Un-Doped Type GaAs Wafers GaSb 2inch InAs Wafers
6inch VGF Growth Method P Type GaAs Wafers GaAs Substrates
10x10mm Gallium oxide substrate monocline structure
Si Doped Undoped GaAs Wafer Gallium Arsenide Substrates 2inch N Type
