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| Categories | NPN PNP Transistors |
|---|---|
| Brand Name: | TOSHIBA |
| Model Number: | GT20J101 |
| Place of Origin: | CHINA |
| MOQ: | 10 PCS |
| Price: | Negotiation |
| Payment Terms: | T/T, Western Union , ESCROW |
| Supply Ability: | 10000PCS |
| Delivery Time: | STOCK |
| Packaging Details: | TUBE |
| VCES: | 600V |
| VGES: | +-20 |
| IC: | 20A |
| ICP: | 40A |
| PC: | 130W |
| Tj: | 150°C |
GT20J101 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
High Power Switching Applications
• The 3rd Generation • Enhancement-Mode
• High Speed: tf = 0.30 µs (max)
• Low Saturation Voltage: VCE (sat) = 2.7 V (max)
| Characteristic | Symbol | Rating | Unit |
| Collector-emitter voltage | VCES | 600 | V |
| Gate-emitter voltage | VGES | +-20 | V |
| Collector current DC | IC | 20 | A |
| Collector current 1 ms | ICP | 40 | A |
| Collector power dissipation (Tc = 25°C) | PC | 130 | W |
| Junction temperature | Tj | 150 | °C |
| Storage temperature range | Tstg | −55~150 | °C |

Deli electronics tehcnology co ltd
www.icmemorychip.com
Email:sales3@deli-ic.com
Skype:hkdeli881
TEL:86-755-82539981
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