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| Categories | Tip Power Transistors | 
|---|---|
| Place of Origin: | ShenZhen China | 
| Brand Name: | Hua Xuan Yang | 
| Certification: | RoHS、SGS | 
| MOQ: | 1000-2000 PCS | 
| Price: | Negotiated | 
| Packaging Details: | Boxed | 
| Delivery Time: | 1 - 2 Weeks | 
| Payment Terms: | L/C T/T Western Union | 
| Supply Ability: | 18,000,000PCS / Per Day | 
| Model Number: | 3DD13003 | 
| VCBO: | 700v | 
| VCEO: | 400V | 
| Emitter-Base Voltage: | 9V | 
| Product name: | semiconductor triode type | 
| Collector Dissipation: | 1.25W | 
| Type: | Triode Transistor | 
TO-251-3L Plastic-Encapsulate Transistors 3DD13003 TRANSISTOR ( NPN )
Power Switching Applications
MAXIMUM RATINGS (Ta =25 Š unless otherwise noted)
| Symbol | Parameter | Value | Unit | 
| VCBO | Collector-Base Voltage | 700 | V | 
| VCEO | Collector-Emitter Voltage | 400 | V | 
| VEBO | Emitter-Base Voltage | 9 | V | 
| IC | Collector Current -Continuous | 1.5 | A | 
| PC | Collector Dissipation | 1.25 | W | 
| TJ, Tstg | Junction and Storage Temperature | -55~+150 | ℃ | 
Ta=25 Š unless otherwise specified
Ta=25 Š unless otherwise specified
| Parameter | Symbol | Test conditions | Min | Typ | Max | Unit | 
| Collector-base breakdown voltage | V(BR)CBO | Ic= 1mA,IE=0 | 700 | V | ||
| Collector-emitter breakdown voltage | V(BR)CEO | Ic= 10 mA,IB=0 | 400 | V | ||
| Emitter-base breakdown voltage | V(BR)EBO | IE= 1mA, IC=0 | 9 | V | ||
| Collector cut-off current | ICBO | VCB= 700V,IE=0 | 1 | mA | ||
| Collector cut-off current | ICEO | VCE= 400V,IB=0 | 0.5 | mA | ||
| Emitter cut-off current | IEBO | VEB= 9 V, IC=0 | 1 | mA | ||
| DC current gain | hFE(1) | VCE= 5 V, IC= 0.5 A | 8 | 40 | ||
| hFE(2) | VCE= 5 V, IC= 1.5A | 5 | ||||
| Collector-emitter saturation voltage | VCE(sat) | IC=1A,IB= 250 mA | 0.6 | V | ||
| Base-emitter saturation voltage | VBE(sat) | IC=1A, IB= 250mA | 1.2 | V | ||
| Base-emitter voltage | VBE | IE= 2A | 3 | V | ||
| Transition frequency | fT | VCE=10V,Ic=100mA f =1MHz | 5 | MHz | ||
| Fall time | tf | IC=1A,IB1=-IB2=0.2A VCC=100V | 0.5 | µs | ||
| Storage time | ts | IC=250mA | 2 | 4 | µs | 
CLASSIFICATION OF hFE1
| Rank | |||||||
| Range | 8-10 | 10-15 | 15-20 | 20-25 | 25-30 | 30-35 | 35-40 | 
CLASSIFICATION OF tS
| Rank | A1 | A2 | B1 | B2 | 
| Range | 2-2.5 (μs ) | 2.5-3(μs ) | 3-3.5(μs ) | 3.5-4 (μs ) | 
Typical Characteristics



TO-92 Package Outline Dimensions
| Symbol | Dimensions In Millimeters | Dimensions In Inches | ||
| Min. | Max. | Min. | Max. | |
| A | 2.200 | 2.400 | 0.087 | 0.094 | 
| A1 | 1.050 | 1.350 | 0.042 | 0.054 | 
| B | 1.350 | 1.650 | 0.053 | 0.065 | 
| b | 0.500 | 0.700 | 0.020 | 0.028 | 
| b1 | 0.700 | 0.900 | 0.028 | 0.035 | 
| c | 0.430 | 0.580 | 0.017 | 0.023 | 
| c1 | 0.430 | 0.580 | 0.017 | 0.023 | 
| D | 6.350 | 6.650 | 0.250 | 0.262 | 
| D1 | 5.200 | 5.400 | 0.205 | 0.213 | 
| E | 5.400 | 5.700 | 0.213 | 0.224 | 
| e | 2.300 TYP. | 0.091 TYP. | ||
| e1 | 4.500 | 4.700 | 0.177 | 0.185 | 
| L | 7.500 | 7.900 | 0.295 | 0.311 | 
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