| Sign In | Join Free | My benadorassociates.com |
|
| Sign In | Join Free | My benadorassociates.com |
|
| Categories | Silicon Power Transistor |
|---|---|
| Place of Origin: | ShenZhen China |
| Brand Name: | Hua Xuan Yang |
| Certification: | RoHS、SGS |
| MOQ: | 1000-2000 PCS |
| Price: | Negotiated |
| Packaging Details: | Boxed |
| Delivery Time: | 1 - 2 Weeks |
| Payment Terms: | L/C T/T Western Union |
| Supply Ability: | 18,000,000PCS / Per Day |
| Model Number: | MMBTA56 |
| Junction Temperature: | 150 ℃ |
| Collector Power Dissipation: | 225mW |
| FEATURE: | General Purpose Amplifier Applications |
| Material: | Silicon |
| Collector Current: | 600 mA |
| Storage Temperature: | -55～+150℃ |
SOT-23 Plastic-Encapsulate Transistors MMBTA56 TRANSISTOR (NPN)
l General Purpose Amplifier Applications
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
| Symbol | Parameter | Value | Unit |
| VCBO | Collector-Base Voltage | -80 | V |
| VCEO | Collector-Emitter Voltage | -80 | V |
| VEBO | Emitter-Base Voltage | -4 | V |
| IC | Collector Current | -500 | mA |
| PC | Collector Power Dissipation | 225 | mW |
| RΘJA | Thermal Resistance From Junction To Ambient | 555 | ℃/W |
| Tj | Junction Temperature | 150 | ℃ |
| Tstg | Storage Temperature | -55～+150 | ℃ |
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
| Parameter | Symbol | Test conditions | Min | Typ | Max | Unit |
| Collector-base breakdown voltage | V(BR)CBO | IC=-100µA, IE=0 | -80 | V | ||
| Collector-emitter breakdown voltage | V(BR)CEO | IC=-1mA, IB=0 | -80 | V | ||
| Emitter-base breakdown voltage | V(BR)EBO | IE=-100µA, IC=0 | -4 | V | ||
| Collector cut-off current | ICBO | VCB=-80V, IE=0 | -0.1 | µA | ||
| Collector cut-off current | ICEO | VCE=-60V, IB=0 | -1 | µA | ||
| Emitter-base breakdown voltage | IEBO | VEB=-4V, IC=0 | -0.1 | µA | ||
| DC current gain | hFE(1) | VCE=-1V, IC=-10mA | 100 | 400 | ||
| hFE(2) | VCE=-1V, IC=-100mA | 100 | ||||
| Collector-emitter saturation voltage | VCE(sat) | IC=-100mA, IB=-10mA | -0.25 | V | ||
| Base-emitter voltage | VBE | VCE=-1V, IC=-100mA | -1.2 | V | ||
| Transition frequency | fT | VCE=-1V,IC=-100mA, f=100MHz | 50 | MHz |
Package Outline Dimensions
| Symbol | Dimensions In Millimeters | Dimensions In Inches | ||
| Min | Max | Min | Max | |
| A | 0.900 | 1.150 | 0.035 | 0.045 |
| A1 | 0.000 | 0.100 | 0.000 | 0.004 |
| A2 | 0.900 | 1.050 | 0.035 | 0.041 |
| b | 0.300 | 0.500 | 0.012 | 0.020 |
| c | 0.080 | 0.150 | 0.003 | 0.006 |
| D | 2.800 | 3.000 | 0.110 | 0.118 |
| E | 1.200 | 1.400 | 0.047 | 0.055 |
| E1 | 2.250 | 2.550 | 0.089 | 0.100 |
| e | 0.950 TYP | 0.037 TYP | ||
| e1 | 1.800 | 2.000 | 0.071 | 0.079 |
| L | 0.550 REF | 0.022 REF | ||
| L1 | 0.300 | 0.500 | 0.012 | 0.020 |
| θ | 0° | 8° | 0° | 8° |
Typical Characteristics
|
A92 High Current NPN Transistor , High Power NPN Silicon Transistor
MMBTA55 NPN Silicon Power Transistor SOT-23 Plastic Encapsulated Transistors
D882 Silicon Power Transistor Collector Power Dissipation 0.5W High Speed Switching
2N5401 High Power PNP Transistor VCBO -160V For Electronic Components
2SD965A Silicon Power Transistor Silicon Material Collector Current 600 MA
B772 High Voltage NPN Switching Transistor Emitter Base Voltage -5V
A94 Silicon Power Transistor Emitter Base Voltage -5V For Mobile Power Supply
SOT-89-3L A44 Silicon Power Transistor NPN Collector Base Voltage 400V
A42 Silicon NPN Power Transistors , NPN Power Transistor High Current
FMMT591 Silicon Power Transistor SOT-23 Plastic Encapsulated Transistors
