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| Categories | Mosfet Power Transistor | 
|---|---|
| Brand Name: | Original brand | 
| Model Number: | STWA65N60DM6 | 
| Certification: | Original | 
| Place of Origin: | Original | 
| MOQ: | 600pcs | 
| Price: | Negotiation | 
| Payment Terms: | T/T | 
| Supply Ability: | 100000pcs | 
| Delivery Time: | 2-3days | 
| Packaging Details: | 600/Reel | 
| Product: | STWA65N60DM6 | 
| Continuous Leakage Current: | 155 A | 
| Package: | TO-247-3 | 
| Installation: | Through Hole | 
| Serise: | DM6 | 
| Configure: | Single | 
| Channel Pattern: | Enhancement | 
Mosfet Power Transistor STWA65N60DM6 Mosfet N-channel 600 V, 0.084 Ohm typ., 30 A MDmesh DM6 Power TO-247
Feature
• Extremely low RDS(on)*area and Qg and optimized capacitance profi le for light load conditions
• Extremely high dv/dt
• Optimized body diode recovery phase
• Optimized softness
APPLICATIONS
• Charging stations for electric vehicles
• LED lighting
• Telecom
• Servers
• Solar inverters
BENEFITS
• Extremely high effi ciency performance and increased power density
• More robust power conversion in ZVS, full and half bridge topologies
• Higher operation frequencies and better thermal management
• Reduced EMI
| Categories | MOSFET T8 40V LOW COSS | 
|---|---|
| STWA65N60DM6 | |
| Transistor Polarity | N-Channel | 
| Channel No. | 1 Channel | 
| Leakage Source on-resistance | 71 mOhms | 
| Qg-Gate Charge | 61 nC | 
| Configure | Single | 
| Continuous Leakage Current | 38A | 
| Vds-Leakage Source Breakdown Voltage | 600V | 
FAQ:
Q1. How about the quality?
A: We test 100% before we ship out and we can offer 120days quality
assurance.
Q2. What is your terms of payment?
A: Order below 10000USD is T/T 100% in advance .
B: Order over 10000USD T/T 50% as deposit to arrange goods.and rest
50% before delivery.
C: Sample order we can support
D: We support PAYPAL, UnionPay and Alipay.
Q3. What is your terms of delivery?
A: EXW, FOB, CFR, CIF.(defaults EXW for all quotation)

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