Undoped Gallium Antimonide Wafer , 3”, As - Cut Wafer , Mechanical Wafer , Or Polished Wafer

Undoped Gallium Antimonide Wafer, 3”, As-Cut Wafer, Mechanical Wafer, Or Polished Wafer

PAM-XIAMEN provides single crystal GaSb(Gallium Antimonide) wafer growth by Liquid Encapsulated Czochralski ( LEC ) method. GaSb(Gallium Antimonide) can be supplied as wafers with as-cut, etched or polished finishes and are available in a wide range of carrier concentration, diameter and thickness. PAM-XIAMEN can provide epi ready grade GaSb wafer for your MOCVD & MBE epitaxial application .Please contact our engineer team for more wafer information.

3" GaSb Wafer Specification

Optical properties of GaSb Wafer

Infrared refractive index
n = k1/2≈3.71·(1+8.25·10-5T)

Long-wave TO phonon energy hνTO = 27.78 meV (300 K).
Long-wave LO phonon energy hνLO = 28.89 meV (300 K).

	Refractive index n versus photon energy, 300 K
	Reflectivity versus photon energy, 300 K
	Intrinsic absorption coefficient near the intrinsic absorption edge in pure p-type samples. T(K): 1. 300, 2. 77, 3. 4.2
	Intrinsic absorption edge in p-type GaSb. Na = 3·1019 cm-3; T(K): 1. 215; 2. 140; 3. 77
	Intrinsic absorption edge at 77 K for different doping levels, p-GaSb. Na(cm-3): 1. 2.9·1017; 2. 5·1018; 3. 1.8·1019; 4. 3·1019

A ground state Rydberg energy RX1 = 2.8 meV.

	The absorption coefficient versus photon energy, T=300 K
	The impurity absorption at low photon energies, T=80 K Undoped sample (p = 2.4·1017 cm-3 at 300 K) Te added (p = 7.5·1016 cm-3) Se added (p = 4.1·1016 cm-3)

Are You Looking for an GaSb Wafer?

PAM-XIAMEN is your go-to place for everything wafers, including GaSb wafers, as we have been doing it for almost 30 years! Enquire us today to learn more about the wafers that we offer and how we can help you with your next project. Our group team is looking forward to providing both quality products and excellent service for you!

Xiamen Powerway Advanced Material Co.,Limited(PAM-XIAMEN) is a high-tech enterprise for compound semiconductor material integrating semiconductor crystal growth, process development and epitaxy, specializing in the research and production of compound semiconductor wafers, there are two main field: SiC&GaN material(SiC wafer and epitaxy, GaN wafer and epi wafer) and III-V material (III-V substrate and epi service: InP wafer, GaSb wafer, GaAs wafer, InAs wafer and InSb wafer). Our wafers are widely used in LED semiconductor lighting,wireless communication, solar power, infrared device, laser, detectors and semiconductor power devices, including power devices, high temperature devices and photoelectric devices, therein, GaN wafer including GaN on Si,GaN on SiC and GaN on Sapphire are for Mini / micro LED, power electronics and microwave RF.

As a leading professional company, we are committed to constantly improving the quality of existing products. PAM-XIAMEN has a strong technical R & D team, composed of graduate students, doctors, masters, and has a strong R & D strength. The technical backbone of the company has been engaged in material preparation and related equipment design and development for almost 30years, and has in-depth research on the physical, chemical and electrical properties of materials, material preparation process. The accumulation of many years of theoretical deposition and practical experience of scientific and technological personnel makes the company have unique insights and unique advantages in the development of relevant materials and equipment, while ensuring that the product performance and equipment design scheme of the company meet the actual technical and technological needs of users.