P Type , GaSb(Gallium Antimonide) Wafer , 2”, Test Grade -Semiconductor Wafer Manufacturing

P Type , GaSb(Gallium Antimonide) Wafer , 2”, Test Grade -Semiconductor Wafer Manufacturing
PAM-XIAMEN offers GaSb wafer – Gallium Antimonide which are grown by LEC(Liquid Encapsulated Czochralski) as epi-ready or mechanical grade with n type, p type or undoped in different orientation(111)or(100).Gallium antimonide (GaSb) is a crystalline compound made from the elements Gallium (Ga) and antimony (Sb).

2" GaSb Wafer Specification

Band structure and carrier concentration of GaSb Wafer

Band structure and carrier concentration of GaSb Wafer include Basic Parameters,Temperature, Dependences,Dependence of the Energy Gap on Hydrostatic Pressure, Effective Masses, Donors and Acceptors

Basic Parameters

Band structure and carrier concentration of GaSb. 300 K Eg= 0.726 eV EL = 0.81 eV EX = 1.03 eV Eso = 0.8 eV

Temperature Dependences

Temperature dependence of the energy gap

Eg = 0.813 - 3.78·10-4·T2/(T+94) (eV),
where T is temperature in degrees K (0 < T < 300).

Temperature dependence of energy EL

EL = 0.902 - 3.97·10-4·T2/(T+94) (eV)

Temperature dependence of energy EX

EX = 1.142 - 4.75·10-4·T2/(T+94) (eV)

Effective density of states in the conduction band

Nc = 4.0·1013·T3/2 (cm-3)

Effective density of states in the conduction band

Nc = 4.0·1013·T3/2 (cm-3)

Effective density of states in the valence band

Nv = 3.5·1015·T3/2 (cm-3)

The temperature dependences of the intrinsic carrier concentration.

Dependences on Hydrostatic Pressure

Eg = Eg(0) + 14.5·10-3P (eV)
EL = EL(0) + 5.0·10-3P (eV)
EX = EX(0) - 1.5·10-3P (eV),
where P is pressure in kbar.

Energy Gap Narrowing at High Doping Levels

Energy gap narrowing versus acceptor acceptor doping density. Curve is calculated for p-GaSb according to Points show experimental results

For n-type GaSb

Eg = 13.6·10-9·Nd1/3 + 1.66·10-7·Nd1/4 + 119·10-12·Nd1/2 (eV)

For p-type GaSb

Eg = 8.07·10-9·Na1/3 + 2.80·10-7·Na1/4+ 4.12·10-12·Na1/2 (eV)

Effective Masses

Electrons:

Holes:

Donors and Acceptors

The diagram of IV group donor states

Ionization energies of shallow donors (eV)

For typical donor concentrations Nd≥ 1017 cm-3 the shallow donor states connected with Γ-valley did not appear.

Ionization energies of shallow acceptors (eV):

The dominant acceptor of undoped GaSb seems to be a native defect.
This acceptor is doubly ionizable

Are You Looking for an GaSb substrate?
PAM-XIAMEN is proud to offer Gallium antimonide substrate for all different kinds of projects. If you are looking for GaSb wafers, send us enquiry today to learn more about how we can work with you to get you the GaSb wafers you need for your next project. Our group team is looking forward to providing both quality products and excellent service for you!

Xiamen Powerway Advanced Material Co.,Limited(PAM-XIAMEN) is a high-tech enterprise for compound semiconductor material integrating semiconductor crystal growth, process development and epitaxy, specializing in the research and production of compound semiconductor wafers, there are two main field: SiC&GaN material(SiC wafer and epitaxy, GaN wafer and epi wafer) and III-V material (III-V substrate and epi service: InP wafer, GaSb wafer, GaAs wafer, InAs wafer and InSb wafer). Our wafers are widely used in LED semiconductor lighting,wireless communication, solar power, infrared device, laser, detectors and semiconductor power devices, including power devices, high temperature devices and photoelectric devices, therein, GaN wafer including GaN on Si,GaN on SiC and GaN on Sapphire are for Mini / micro LED, power electronics and microwave RF.

As a leading professional company, we are committed to constantly improving the quality of existing products. PAM-XIAMEN has a strong technical R & D team, composed of graduate students, doctors, masters, and has a strong R & D strength. The technical backbone of the company has been engaged in material preparation and related equipment design and development for almost 30years, and has in-depth research on the physical, chemical and electrical properties of materials, material preparation process. The accumulation of many years of theoretical deposition and practical experience of scientific and technological personnel makes the company have unique insights and unique advantages in the development of relevant materials and equipment, while ensuring that the product performance and equipment design scheme of the company meet the actual technical and technological needs of users.