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| Categories | Infrared Photoelectric Sensor | 
|---|---|
| Brand Name: | Hamamatsu | 
| Model Number: | S1226-8BQ | 
| Place of Origin: | Japan | 
| MOQ: | 1 | 
| Payment Terms: | L/C, D/A, D/P, T/T, Western Union, MoneyGram | 
| Supply Ability: | 3000/pcs/pre | 
| Delivery Time: | 3-5work days | 
| Packaging Details: | In a box | 
| Price: | Negotiable | 
| photographic area is: | 5.8 × 5.8mm | 
| Number of pixels: | 1 | 
| Refrigeration and: | Non - cooled | 
| Encapsulated: | Metal | 
| encapsulation type is: | TO-8 | 
| Reverse voltage (max): | 5V | 
| Company Info. | 
| ShenzhenYijiajie Electronic Co., Ltd. | 
| Verified Supplier | 
| View Contact Details | 
| Product List | 
Product Description:
S1226-8BQ Silicon Photodiode For UV To Visible Precision Photometry Suppressed Near IR Sensitivity
Features:
● High UV sensitivity: QE = 75% (λ=200 nm)
● Suppress NIR sensitivity
● Low dark current
● High reliability
Dark current (maximum) 20 pA
Rise time (typical value). 2 mu s
Junction capacitance (typical value) 1200 pF
Measurement condition Ta=25 ℃, Typ., Unless otherwise noted, Photosensitivity: λ=720 nm, Dark current: VR=10 mV, Terminal capacitance: VR=0 V, f=10 kHz
Specifications:
| Reverse voltage (Max.) | 5V | 
| spectral response range is | 190 to 1000 nm | 
| peak sensitivity wavelength (typical value) was | 720 nm | 
| Type | infrared photoelectricity | 


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