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| Categories | SMD LED Chip |
|---|---|
| Brand Name: | PHOENIX |
| Model Number: | 2016 |
| Certification: | LM80 CE ROHS |
| Place of Origin: | SUZHOU |
| MOQ: | 16000PCS |
| Price: | Negotiation |
| Payment Terms: | Western Union, MoneyGram, T/T |
| Supply Ability: | 400KK PER MONTH |
| Delivery Time: | 7-10 DAYS |
| Packaging Details: | 4000PCS /ROLL |
| Name: | SMD LED 2016 white color |
| Luminous Flux(lm): | 28-30lm |
| Color Rendering Index(Ra): | 80 |
| Cct: | 6500K |
| Power: | 0.2W |
| nput Voltage(V): | 3v |
| Warranty(Year): | 2 years |
| Working Time (hours): | 20000 |
| Operating Temperature(℃): | -40-85 |
| Lamp Luminous Efficiency(lm/w): | 140 |
Backlighting High lumen 2016 3V 60MA 0.2W 26-28LM 6500K PCT SMD LED
CHIP Phone Flash light
1.Product Freatures
.Efficacy of 140 lm/W typical for 6500K,CRI 80
.Adopt good quality chip and frame ,antistatic good stability Ultra low attenuation
.High brightness ,low attenuation high color rendering
. Minimum 80, 90 and 95 CRI options
.Strong welding and good stability undead light
.Product series and company logo on the front
. CE ROHS LM80 Certification
.Viewing angle:120 deg
.RoHS compliant lead-free soldering compatible
2.Package Structure
3.Absolute Maximum Ratings
| Item | Symbol | Absolute Maximum Ratings | Unit |
| Forward Current | IF | 60 | mA |
| Reverse Voltage | Vr | 5 | V |
| Pulsed Forward Current | IFP* | 90 | mA |
| Power dissipation | PD | 0.2 | W |
| Operating Temperature | TOP | -40~85 | ℃ |
| Storage Temperature | TST | -40~85 | ℃ |
| Electrostatic Discharge | ESD | 2000(HBM) | V |
| Junction Temperature | Tj | 110 | ℃ |
| LED Thermal resistance | Rth s-j | 27 | ℃/W |
4.Typical Electro-Optical characteristics curves
5.LED Reliability Test List
| Test Item | Test Conditions | Standard | Qty(Pcs) |
| Life Test | 25℃,1000Hrs@60mA | / | 22 |
| High Temperature | 85℃,1000Hrs@60mA | / | 22 |
| Low Temperature | -40℃,1000Hrs@60mA | / | 22 |
| High Humidity Heat | 85℃,85%RH, 1000Hrs@60mA | / | 22 |
| Low Temperature Storage | -40℃,1000Hrs | JEITA ED-4701 200 202 | 22 |
| High Temperature Storage | 100℃,1000Hrs | JEITA ED-4701 200 201 | 22 |
| Temperature Cycle | (-40'C 30mins --25'C(5mins)--100'C(30mins) ,Temp changing rate:3+/-0.6'C/min) | JEITA ED-4701 100 105 | 22 |
| Thermal Shock | -40'C(15mins) --100'C(15mins),changing time <5mins ,300C | MIL-STD-202G | 22 |
| Pulse Life Test | Tp=1ms,DC=0.1,D=Tp/T @ 3×60mA,1000Hrs | / | 22 |
| ESD Test(HBM) | 2000V,200V/Step, Forward & Reverse Test both 3times | AEC (Q101-001) | 22 |
| Soldering Resistance | 260±5℃,10S,3times Pre-treatment 30℃,70%RH | JEITA ED-4701 300 302 | 22 |
| Reflow IV Decay | 260±5℃,10S,1time Pre-treatment 30℃,70%RH,168Hrs | / | 22 |
| Judgment Criteria | |||
| Forward Voltage VF | VF Max-Increase < 1.1x | ||
| Reverse Current IR | IR Max-Increase < IRmax | ||
| Luminous Intensity IV | IV Decay < 40% | ||
| ※Solder ability test criteria:coverage is not less than 95% | |||
| Note:Measurement shall be taken after the tested samples have been returned to normal ambient conditions (generally after two hours) | |||
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