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WG50N65DHWQ IGBT Transistor Module , Field Stop Trench IGBT 650V 91A 278W

WG50N65DHWQ IGBT Transistor Module , Field Stop Trench IGBT 650V 91A 278W

WG50N65DHWQ IGBT Transistor Module , Field Stop Trench IGBT 650V 91A 278W
WG50N65DHWQ IGBT Transistor Module , Field Stop Trench IGBT 650V 91A 278W
Categories IGBT Transistor Module
Brand Name: WeEn Semiconductors
Model Number: WG50N65DHWQ
MOQ: 50pcs
Price: Negotiable
Supply Ability: 1000000pcs
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 91 A
Current - Collector Pulsed (Icm): 200 A
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
Power - Max: 278 W
Switching Energy: 1.7mJ (on), 600µJ (off)
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Company Info.
HongKong Wei Ya Hua Electronic Technology Co.,Limited
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WG50N65DHWQ IGBT Transistor Module , Field Stop Trench IGBT 650V 91A 278W

WG50N65DHWQ IGBT Trench Field Stop 650 V 91 A 278 W Through Hole TO-247-3

WeEn Semiconductors WG50N65DHWQ IGBT

WeEn Semiconductors WG50N65DHWQ IGBT is a high-speed 650V/50A IGBT with an anti-parallel diode in a TO247 package. This IGBT offers high-speed with low switching losses and features smooth switching behavior that avoids voltage overshoot and reduces system EMI. The WG50N65DHWQ IGBT features trench gate field-stop technology and offers low thermal resistance. This IGBT comes in a halogen-free package, features a Pb-free lead finish, and is RoHS compliant. Typical applications include power factor correction, welding converter, solar inverter. industrial inverter, and UPS.

FEATURES

  • High-speed with low switching losses
  • Fast and soft recovery anti-parallel diode
  • Positive VCE(sat) temperature coefficient
  • Fast and soft recovery anti-parallel diode
  • Qualified according to JEDEC and meets UL94V0 flammability requirement
  • Smooth switching behavior avoids voltage overshoot and reduces system EMI
  • Halogen-free package and Pb-free lead finish
  • RoHS compliant
  • Low thermal resistance
  • Low VCE(sat) and low switching losses
  • Trench gate field-stop technology

SPECIFICATIONS

  • -55°C to 150°C operating junction temperature range
  • 650V Collector-Emitter Voltage VCE
  • 50A DC collector current IC

APPLICATIONS

  • Power factor correction
  • Welding converter
  • Solar inverter
  • Industrial inverter
  • UPS

MECHANICAL DRAWING

Mechanical Drawing - WeEn Semiconductors WG50N65DHWQ IGBT
Product Tags:

WG50N65DHWQ IGBT Transistor Module

  

278W IGBT Transistor Module

  

Field Stop Trench IGBT 650V

  
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WG50N65DHWQ IGBT Transistor Module , Field Stop Trench IGBT 650V 91A 278W

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