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| Categories | Piezoelectric Effect Crystals |
|---|---|
| Brand Name: | Crystro |
| Place of Origin: | China |
| MOQ: | 1pc |
| Price: | USD 20-200/pc |
| Payment Terms: | T/T, Western Union, MoneyGram, Paypal |
| Supply Ability: | 2000pcs per month |
| Delivery Time: | 3-5 weeks |
| Packaging Details: | Transparent clean box |
| Model Number: | CR210816-01 |
| Certification: | SGS/COC |
| Material:: | Optical Grade Fe doped LT Fe：LiTaO3 Wafers Lithium Tantanlate Wafer |
| Crystal Sturucture: | Trigonal, Space group R3c, Point group 3m |
| Cell Parameters: | a=5.154 Å, c=13.781 Å |
| Melting Point: | 1650℃ |
| Curie Temperature: | 607℃ |
| Mohs Hardness: | 5.5 |
| Density: | 7.46g/cm3 |
| Diameter: | Φ4''-6'' |
| Company Info. |
| ANHUI CRYSTRO CRYSTAL MATERIALS Co., Ltd. |
| Verified Supplier |
| View Contact Details |
| Product List |
Optical Grade Fe doped LT Fe:LiTaO3 Wafers Lithium Tantanlate Wafer
LiTaO3 is an E-O crystal widesly used for E-O devices, due to its good optical NLO and E-O properties, as well as high damage threshold. Crystro supplies hign quality LiTaO3 boules and wafers with the following specifications for standard applications. We can also offer other specification upon request:
Crystro's Fe:LiTaO3 is grown by Czochralski method.Max diameter reach 6inch,can offer kinds of size per required.
Anhui Crystro participate in the kinds exhibitions every year: Laser World of Photonics Munich, Shanghai, Photonics West in San Francisco, CIOE in Shenzhen, etc.We looking forward to meet you.
Typical Specifications:
| Material | LiTaO3 wafers(White or Black &Fe doped) | |
| Curie Temp | 603±2℃ | |
| Cutting Angle | X/Y/Z/X112Y/Y36/Y42/Y48/etc | |
| Diameter/size | 2”/3”/4" LT wafer or other size | |
| Tol(±) | <0.20 mm | |
| Thickness | 0.18 ~ 0.5mm or more | |
| Primary Flat | 22mm /32mm /42.5mm /57.5mm | |
| LTV (5mmx5mm) | <1µm | |
| TTV | <3µm | |
| Bow | -30<bow<30 | |
| Warp | <40µm | |
| PLTV(<0.5um) | ≥95%(5mm*5mm) | |
| Orientation Flat | All available | |
| Surface Type | Single Side Polished /Double Sides Polished | |
| Polished side Ra | <0.5nm | |
| Back Side Criteria | General is 0.2-0.5µm or as customized | |
| Edge Criteria | R=0.2mm or Bullnose | |
| Fe doped | Fe doped for saw grade LN< wafers | |
| Wafer Surface Criteria | Transmissivity | general:5.9x10-11<s<2.0*10-10 at 25℃ |
| Contamination, | None | |
| Particles ￠>0.3 µ m | <= 30 | |
| Scratch , Chipping | None | |
| Defect | No edge cracks, scratches, saw marks, stains | |
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