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2um - 300um Technical Ceramic Parts Silicon On Insulator SOI Wafer

Categories Technical Ceramic Parts
Brand Name: ZG
Model Number: MS
Certification: CE
Place of Origin: CHINA
MOQ: 1 piece
Price: USD10/piece
Payment Terms: L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability: 10000 pieces per month
Delivery Time: 3 working days
Packaging Details: Strong wooden box for Global shipping
Application: integrated circuits , detector / sensor device , MEMS fabrication, opto-electronic components, and solar cells
Diameter: Ø 4"/ Ø 6" / Ø 8"
Device Thickness: 2 um ~ 300 um
Coating: Oxide and nitride can be supplied on both sides of SOI wafer
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2um - 300um Technical Ceramic Parts Silicon On Insulator SOI Wafer


SOI Wafer ( Silicon-on-Insulator )


We provides high quality SOI wafer ( Silicon-on-Insulator ) for a varity of application including MEMS , Power device , Pressure sensors and CMOS integrated circuit fabrication . SOI wafer provide a potential solution for high speed and low power consumption device and has been widely acknowledged as a new solution for high voltage and RF components. SOI wafer is a sandwich structure including a device layer ( active layer ) on top , a buried oxide layer ( insulating SiO2 layer ) in the middle , and a handle wafer ( bulk silicon ) in the bottom . SOI wafers are produced by using SIMOX and wafer bonding technology to achieve thinner and precise device layer and ensure the requirement of thickness uniformity and low defect density . We can provide SOI wafer in diameter 4" and 8 " with flexible thickness and wide resistivity range to meet your unique SOI requirements . Contact us for further SOI product informations .


SOI Wafer Application


High-speed ICsHigh-temperature ICs
Low-power ICsLow-voltage ICs
Microwave componentsPower device
MEMSSemiconductor

Product Specification

MethodFusion bonding
DiameterØ 4"/ Ø 6" / Ø 8"
Device thickness2 um ~ 300 um
Tolerance+/- 0.5 um ~ 2 um
Orientation<100> / <111> / <110> or others
ConductivityP - type / N - type / Intrinsic
DopantBoron / Phosphorous / Antimony / Arsenic
Resistivity0.001 ~ 100000 ohm-cm
Oxide thickness500A ~ 4 um
Tolerance+/- 5%
Handle wafer>= 300 um
SurfaceDouble sides polished
CoatingOxide and nitride can be supplied on both sides of SOI wafer

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