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FGL60N100BNTD IGBT NPT and Trench 1000V 60A 180W Through Hole TO-264-3

Categories Integrated Circuit IC Chip
Brand Name: Fairchild Semiconductor
Model Number: FGL60N100BNTD
Certification: ROHS
Place of Origin: CHINA
MOQ: 10pcs
Price: negotiate
Payment Terms: Western Union, T/T,Paypal
Supply Ability: Consultation
Delivery Time: 2-3 working days
Packaging Details: 375PCS/Standard Package
Voltage - Collector Emitter Breakdown (Max): 1000V
Power - Max: 180W
Operating Temperature: -55°C ~ 150°C (TJ)
Reverse Recovery Time (trr): 1.2µs
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FGL60N100BNTD IGBT NPT and Trench 1000V 60A 180W Through Hole TO-264-3

FGL60N100BNTD IGBT NPT and Trench 1000V 60A 180W Through Hole TO-264-3

Features

• High Speed Switching

• Low Saturation Voltage : VCE(sat) = 2.5 V @ IC = 60A

• High Input Impedance

• Built-in Fast Recovery Diode

General Description

Trench insulated gate bipolar transistors (IGBTs) with NPT

technology show outstanding performance in conduction

and switching characteristics as well as enhanced

avalanche ruggedness. These devices are well suited for

Induction Heating ( I-H ) applications

IGBT TypeNPT and Trench
Voltage - Collector Emitter Breakdown (Max)1000V
Current - Collector (Ic) (Max)60A
Current - Collector Pulsed (Icm)120A
Vce(on) (Max) @ Vge, Ic2.9V @ 15V, 60A
Power - Max180W
Switching Energy-
Input TypeStandard
Gate Charge275nC
Td (on/off) @ 25°C140ns/630ns
Test Condition600V, 60A, 51 Ohm, 15V
Reverse Recovery Time (trr)1.2µs
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
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