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FGA25N120ANTDTU Power Mosfet Transistor New & Original 1200V NPT Trench IGBT

Categories Electronic IC Chips
Model Number: FGA25N120ANTD
Certification: new & origianl
Place of Origin: original factory
MOQ: 10 pcs
Price: Negotiate
Payment Terms: T/T, Western Union, Paypal
Supply Ability: 4800pcs
Delivery Time: 1 day
Packaging Details: Please contact me for details
Description: IGBT NPT and Trench 1200 V 50 A 312 W Through Hole TO-3P
Collector-Emitter Voltage: 1200 V
Gate-Emitter Voltage: ± 20 V
Pulsed Collector Current: 90 A
Diode Maximum Forward Current: 150 A
Operating Junction Temperature: -55 to +150 °C
Storage Temperature Range: -55 to +150 °C
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FGA25N120ANTDTU Power Mosfet Transistor New & Original 1200V NPT Trench IGBT


FGA25N120ANTD/FGA25N120ANTD_F109

1200V NPT Trench IGBT


Features

• NPT Trench Technology, Positive temperature coefficient

• Low saturation voltage: VCE(sat), typ = 2.0V @ IC = 25A and TC = 25°C

• Low switching loss: Eoff, typ = 0.96mJ @ IC = 25A and TC = 25°C

• Extremely enhanced avalanche capability


Description

Using Fairchild's proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation.

This device is well suited for the resonant or soft switching application such as induction heating, microwave oven, etc.


Absolute Maximum Ratings

SymbolDescriptionFGA25N120ANTDUnits
VCESCollector-Emitter Voltage1200V
VGESGate-Emitter Voltage± 20V
ICCollector Current @ TC = 25°C50A
Collector Current @ TC = 100°C25A
ICMPulsed Collector Current (Note 1)90A
IFDiode Continuous Forward Current @ TC = 100°C25A
IFMDiode Maximum Forward Current150A
PDMaximum Power Dissipation @ TC = 25°C312W
Maximum Power Dissipation @ TC = 100°C125W
TJOperating Junction Temperature-55 to +150°C
TstgStorage Temperature Range-55 to +150°C
TL

Maximum Lead Temp. for soldering Purposes,

1/8” from case for 5 seconds

300°C

Mechanical Dimensions


TO-3PN


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