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| Categories | Electronic IC Chips |
|---|---|
| Model Number: | FDS9435A |
| Certification: | new & original |
| Place of Origin: | original factory |
| MOQ: | 10pcs |
| Price: | Negotiate |
| Payment Terms: | T/T, Western Union, Paypal |
| Supply Ability: | 8300pcs |
| Delivery Time: | 1 day |
| Packaging Details: | Please contact me for details |
| Description: | P-Channel 30 V 5.3A (Ta) 2.5W (Ta) Surface Mount 8-SOIC |
| Drain-Source Voltage: | –30 V |
| Gate-Source Voltage: | ±25 V |
| Operating Junction Temperature: | –55 to +175 °C |
| Storage Temperature: | –55 to +175 °C |
| Drain Current (Continuous): | –5.3 A |
| Thermal Resistance, Junction-to-Case: | 25 °C/W |
FDS9435A Power Mosfet Transistor Single P - Channel Field Effect Transistor
General Description
This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V).
Applications
· Power management
· Load switch
· Battery protection
Features
· –5.3 A, –30 V RDS(ON) = 50 mW @ VGS = –10 V
RDS(ON) = 80 mW @ VGS = –4.5 V
· Low gate charge
· Fast switching speed
· High performance trench technology for extremely low RDS(ON)
· High power and current handling capability
Absolute Maximum Ratings TA=25℃ unless otherwise noted
| Symbol | Parameter | Ratings | Units |
| VDSS | Drain-Source Voltage | -30 | V |
| VGSS | Gate-Source Voltage | ±25 | V |
| ID | Drain Current – Continuous (Note 1a) – Pulsed | -5.3 | A |
| -50 | |||
| PD | Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) | 2.5 | W |
| 1.2 | |||
| 1 | |||
| TJ, TSTG | Operating and Storage Junction Temperature Range | -55 to +175 | °C |
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