N - Channel 600 V 2.0 Ohm rf high Power Mosfet Transistor NDD04N60ZT4G

N - Channel 600 V 2.0 Ohm rf high Power Mosfet Transistor NDD04N60ZT4G

Features

• Low ON Resistance

• Low Gate Charge

• ESD Diode−Protected Gate

• 100% Avalanche Tested

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

NOTES:

1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES.

3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z.

4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.006 INCHES PER SIDE.

5. DIMENSIONS D AND E ARE DETERMINED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY.

6. DATUMS A AND B ARE DETERMINED AT DATUM PLANE H.

STOCK LIST

CHONGMING GROUP (HK) INT'L CO., LTD. located in Hong Kong and Shenzhen. We are an independent Distributor of Electronic Components,established in 2008. AS a growing fast company, CM GROUP is renowned for its world-class efficiency, excellent services, and extraordinary ability to supply electronic components that are hard to find and even obsolete. We have taken pride in our innovation, reliability and service, especially in the semiconductor marketplace.
Our distribution brands include XILINX，ALTERA，ATMEL, INFINEON, ST,SAMSUNG，TEXAS INSTRUMENTS，ON，TOSHIBA，，MICROCHIP，CYPRESS，FREESCALE，etc. We distributes over 200,000 products ranging from semiconductors to resistors, capacitors, diodes, inductors, connectors, transistors, sensors and so on.
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