200A 1700V High Power IGBT Module / FF200R17KE4HOSA1 SP000713374

FF200R17KE4HOSA1 SP000713374 Infineon IGBT Module IGBT Module 200A 1700V High Power

FF200R17KE4

Manufacturer: Infineon
Product Type: IGBT Modules
Configuration: Dual
Collector-emitter maximum voltage VCEO: 1.7 kV
Collector-emitter saturation voltage: 1.95 V
Continuous collector current at 25 C: 310 A
Gate-emitter leakage current: 100 nA
Pd-power dissipation: 1250 W
Package / Box: 62 mm
Minimum working temperature: - 40 C
Maximum working temperature: + 150 C
Package: Tray
Gate/emitter maximum voltage: 20 V
Mounting Style: Chassis Mount
Series: Trenchstop IGBT4 - E4
Packing Quantity: 10 PCS
Subcategory: IGBTs
Technology: Si

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