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6inch Sapphire Wafer Orientation 0001 Al2O3 Single Crystal Optical Transparency

Categories Sapphire Wafer
Brand Name: zmkj
Model Number: 4.125/6.125/6inch/8inch
Certification: Cz/ Rohs/ GSG
Place of Origin: China
MOQ: 1pcs
Price: by case
Payment Terms: Western Union, T/T, L/C
Supply Ability: 100pcs
Delivery Time: 3-4weeks
Packaging Details: by substrates cassette box
material: Al2O3 monocrystalline
orientation: C plane
surface: dsp or ssp
thickness: 650 um +/- 25 um (SSP) , 600 um +/- 25 um (DSP)
ttv: <20um
application1: semiconductor carrier plate/sos/ pss/optical
application2: Semiconductor Etching Epitaxy Carrier
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6inch Sapphire Wafer Orientation 0001 Al2O3 Single Crystal Optical Transparency

6inch Sapphire Wafer Orientation 0001 Al2O3 Single Crystal


4inch Sapphire Wafer C-Plane Single or Double Side Polished Al2O3 Single Crystal

4inch Dia100mm A plane Single Crystal Sapphire Wafer

2inch Dia50mm C axis Single Crystal Sapphire Wafer Sapphire Substrates
8inch Dia 159mm Single Crystal Sapphire Wafer For Epi - Ready Carrier
4inch/ 5inch/ 6inch/ 6.125inch/8inch c-plane R-axis (1-102) (10-10) sapphire wafer,dia200mm sapphire substrates ,2-6inch C-axis double side polished sapphire wafer for led epi-ready,sapphire substrates, Al2O3 crystal optical lens, Double Side Polished SSP Surface 8" Sapphire Carrier


Orientation

  1. R-axis (10-12)
  2. C-axis (0001)
  3. A-axis (11-20)
  4. M-axis (11-10)

A-Plane sapphire substrates - are usually used for hybrid microelectronic applications requiring a uniform dielectric constant and highly insulating characteristics.

C-Plane substrates - tend to be used for lll-V and ll-Vl compounds, such as GaN, for bright blue and green LED and laser diodes.

R-Plane substrates - these are preferred for the hetero-epitaxial deposition of silicon used in microelectronic IC applications.



Feature


  • All orientations are available, custom orientation is welcome
  • Wafer size from 2 to 6 inches are available for all types
  • Thin wafer down to 250um for 2 inch, 300um for 4 inch and 300um for 6 inch



Specifications of Sapphire Wafer, 6 inch, C-plane (0001), Prime Grade

MaterialHigh Purity, >99.99%, single crystal Al2O3
Dimension150.0 mm +/- 0.05 mm
Thickness1300 um +/- 25 um (SSP) , 600 um +/- 25 um (DSP)
OrientationC plane (0001) off M (1-100) plane 0.2 +/- 0.05 degree
Primary flat orientationA-plane +/- 1 degree
Total Thickness Variation (TTV)<20um
Bow<25um
Warp<25um
Thermal Expansion Coefficient6.66 x 10-6 / °C parallel to C axis, 5 x 10-6 /°C
Dielectric Strength4.8 x 105 V/cm
Dielectric Constant11.5 (1 MHz) along C axis, 9.3 (1 MHz) perpendicular to C axis
Dielectric Loss Tangent (a.k.a. dissipation factor)less than 1 x 10-4

Transmittance:

88% +/-1 % @460 nm

Electrical Properties of Sapphire
Resistivity, Ohm x cm at 200-500 °C: 1011- 1016
Dielectric constant: 10.0
Dielectric strength, V/cm: 4 x 105
Loss tangent: 1 x 10-4


Application

  1. Growth substrate for III-V and II-VI compounds
  2. Electronics and optoelectronics
  3. IR applications
  4. Silicon On Sapphire Integrated Circuit(SOS)
  5. Radio Frequency Integrated Circuit(RFIC)

Product display


Packing of sapphire wafers




FAQ:

Q: What's your MOQ?
A: (1) For inventory, the MOQ is 10pcs.
(2) For customized products, the MOQ is 25pcs up.

Q: What's the way of shipping and cost?
A:(1) We accept DHL, Fedex, EMS etc.
(2) If you have your own express account, it's great.If not,we could help you ship them.
Freight is in accordance with the actual settlement.

Q: What's the delivery time?
For inventory: the delivery is 5 workdays after you place the order.
For customized products: the delivery is 2 or 3 weeks after you place the order.

Q: Do you have standard products?
A: Our standard products in stock.as like 4inch 0.65mm,0.5mm polished wafer.
Q: How to pay?
A:50%deposit, left before delivery T/T,
Q: Can I customize the products based on my need?
A: Yes, we can customize the material, specifications and optical coating for your optical
components based on your needs.

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