RQ3L050GNTB

Categories	Single FETs, MOSFETs
Category:	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature:	-
Vgs(th) (Max) @ Id:	2.5V @ 25µA
Operating Temperature:	150°C (TJ)
Package / Case:	8-PowerVDFN
Gate Charge (Qg) (Max) @ Vgs:	2.8 nC @ 4.5 V
Rds On (Max) @ Id, Vgs:	61mOhm @ 5A, 10V
FET Type:	N-Channel
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Package:	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Drain to Source Voltage (Vdss):	60 V
Vgs (Max):	±20V
Product Status:	Active
Input Capacitance (Ciss) (Max) @ Vds:	300 pF @ 30 V
Mounting Type:	Surface Mount
Series:	-
Supplier Device Package:	8-HSMT (3.2x3)
Mfr:	Rohm Semiconductor
Current - Continuous Drain (Id) @ 25°C:	12A (Tc)
Power Dissipation (Max):	14.8W (Tc)
Technology:	MOSFET (Metal Oxide)
Base Product Number:	RQ3L050
Description:	MOSFET N-CHANNEL 60V 12A 8HSMT

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Beijing Silk Road Enterprise Management Services Co.,LTD

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N-Channel 60 V 12A (Tc) 14.8W (Tc) Surface Mount 8-HSMT (3.2x3)

Product Tags:

ISL6524CB

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