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A3G26H200W17SR3

A3G26H200W17SR3
Categories RF FETs, MOSFETs
Category: Discrete Semiconductor Products Transistors FETs, MOSFETs RF FETs, MOSFETs
Product Status: Active
Configuration: -
Voltage - Rated: 125 V
Package: Tape & Reel (TR)
Series: -
Noise Figure: -
Supplier Device Package: NI-780S-4S2S
Voltage - Test: 48 V
Mfr: NXP USA Inc.
Frequency: 2.496GHz ~ 2.69GHz
Gain: 14.2dB
Package / Case: NI-780S-4S2S
Current - Test: 120 mA
Power - Output: 34W
Technology: -
Current Rating (Amps): -
Description: AIRFAST RF POWER GAN TRANSISTOR,
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A3G26H200W17SR3

RF Mosfet 48 V 120 mA 2.496GHz ~ 2.69GHz 14.2dB 34W NI-780S-4S2S
Product Tags:

LM293AD

  

LM3S6952

  

LH7A404N0F092B3

  
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