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IPW60R060P7XKSA1

Categories Single FETs, MOSFETs
Category: Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature: -
Vgs(th) (Max) @ Id: 4V @ 800µA
Operating Temperature: -55°C ~ 150°C (TJ)
Package / Case: TO-247-3
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Rds On (Max) @ Id, Vgs: 60mOhm @ 15.9A, 10V
FET Type: N-Channel
Drive Voltage (Max Rds On, Min Rds On): 10V
Package: Tube
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Product Status: Active
Input Capacitance (Ciss) (Max) @ Vds: 2895 pF @ 400 V
Mounting Type: Through Hole
Series: CoolMOS™ P7
Supplier Device Package: PG-TO247-3
Mfr: Infineon Technologies
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Power Dissipation (Max): 164W (Tc)
Technology: MOSFET (Metal Oxide)
Base Product Number: IPW60R060
Description: MOSFET N-CH 600V 48A TO247-3
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IPW60R060P7XKSA1

N-Channel 600 V 48A (Tc) 164W (Tc) Through Hole PG-TO247-3
Product Tags:

IP4220CZ6

  

K9F5608U0D-P

  

K9F5608U0D

  
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