Sign In | Join Free | My benadorassociates.com
benadorassociates.com
Products
Search by Category
Home > Other Plastic Raw Materials >

IPP65R041CFD7XKSA1

Categories Single FETs, MOSFETs
Category: Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature: -
Vgs(th) (Max) @ Id: 4.5V @ 1.24mA
Operating Temperature: -55°C ~ 150°C (TJ)
Package / Case: TO-220-3
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
Rds On (Max) @ Id, Vgs: 41mOhm @ 24.8A, 10V
FET Type: N-Channel
Drive Voltage (Max Rds On, Min Rds On): 10V
Package: Tube
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Product Status: Active
Input Capacitance (Ciss) (Max) @ Vds: 4975 pF @ 400 V
Mounting Type: Through Hole
Series: CoolMOS™ CFD7
Supplier Device Package: PG-TO220-3-1
Mfr: Infineon Technologies
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Power Dissipation (Max): 227W (Tc)
Technology: MOSFET (Metal Oxide)
Base Product Number: IPP65R041
Description: 650V FET COOLMOS TO247
  • Haven't found right suppliers
  • Our buyer assistants can help you find the most suitable, 100% reliable suppliers from China.
  • And this service is free of charge.
  • we have buyer assistants who speak English, French, Spanish......and we are ready to help you anytime!
Submit Buying Request
  • Product Details
  • Company Profile

IPP65R041CFD7XKSA1

N-Channel 650 V 50A (Tc) 227W (Tc) Through Hole PG-TO220-3-1
Product Tags:

K9F5608U0A-YCB0

  

K9F1208U0M-YCB0

  

DS1809Z-010+

  
Buy IPP65R041CFD7XKSA1 at wholesale prices
Send your message to this supplier
 
*From:
*To: Beijing Silk Road Enterprise Management Services Co.,LTD
*Subject:
*Message:
Characters Remaining: (0/3000)
 
Inquiry Cart 0