IRFHM9331TRPBF

Categories	Single FETs, MOSFETs
Category:	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature:	-
Vgs(th) (Max) @ Id:	2.4V @ 25µA
Operating Temperature:	-55°C ~ 150°C (TJ)
Package / Case:	8-PowerTDFN
Gate Charge (Qg) (Max) @ Vgs:	48 nC @ 10 V
Rds On (Max) @ Id, Vgs:	10mOhm @ 11A, 20V
FET Type:	P-Channel
Drive Voltage (Max Rds On, Min Rds On):	10V, 20V
Package:	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Drain to Source Voltage (Vdss):	30 V
Vgs (Max):	±25V
Product Status:	Active
Input Capacitance (Ciss) (Max) @ Vds:	1543 pF @ 25 V
Mounting Type:	Surface Mount
Series:	HEXFET®
Supplier Device Package:	PQFN (3x3)
Mfr:	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C:	11A (Ta), 24A (Tc)
Power Dissipation (Max):	2.8W (Ta)
Technology:	MOSFET (Metal Oxide)
Base Product Number:	IRFHM9331
Description:	MOSFET P-CH 30V 11A/24A PQFN

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Beijing Silk Road Enterprise Management Services Co.,LTD

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P-Channel 30 V 11A (Ta), 24A (Tc) 2.8W (Ta) Surface Mount PQFN (3x3)

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