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SIR422DP-T1-GE3

Categories Single FETs, MOSFETs
Category: Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature: -
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Operating Temperature: -55°C ~ 150°C (TJ)
Package / Case: PowerPAK® SO-8
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Rds On (Max) @ Id, Vgs: 6.6mOhm @ 20A, 10V
FET Type: N-Channel
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Package: Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Product Status: Active
Input Capacitance (Ciss) (Max) @ Vds: 1785 pF @ 20 V
Mounting Type: Surface Mount
Series: TrenchFET®
Supplier Device Package: PowerPAK® SO-8
Mfr: Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Power Dissipation (Max): 5W (Ta), 34.7W (Tc)
Technology: MOSFET (Metal Oxide)
Base Product Number: SIR422
Description: MOSFET N-CH 40V 40A PPAK SO-8
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SIR422DP-T1-GE3

N-Channel 40 V 40A (Tc) 5W (Ta), 34.7W (Tc) Surface Mount PowerPAK® SO-8
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