SIHP22N60E-GE3

Categories	Single FETs, MOSFETs
Category:	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:	86 nC @ 10 V
FET Feature:	-
Product Status:	Active
Mounting Type:	Through Hole
Package:	Tube
Input Capacitance (Ciss) (Max) @ Vds:	1920 pF @ 100 V
Series:	E
Vgs (Max):	±30V
Vgs(th) (Max) @ Id:	4V @ 250µA
Mfr:	Vishay Siliconix
Rds On (Max) @ Id, Vgs:	180mOhm @ 11A, 10V
Operating Temperature:	-55°C ~ 150°C (TJ)
FET Type:	N-Channel
Drive Voltage (Max Rds On, Min Rds On):	10V
Power Dissipation (Max):	227W (Tc)
Package / Case:	TO-220-3
Drain to Source Voltage (Vdss):	600 V
Current - Continuous Drain (Id) @ 25°C:	21A (Tc)
Technology:	MOSFET (Metal Oxide)
Base Product Number:	SIHP22
Description:	MOSFET N-CH 600V 21A TO220AB

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Beijing Silk Road Enterprise Management Services Co.,LTD

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N-Channel 600 V 21A (Tc) 227W (Tc) Through Hole

Product Tags:

AT93C46A-SI2.7

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