IPP65R110CFDXKSA2

Categories	Single FETs, MOSFETs
Category:	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature:	-
Vgs(th) (Max) @ Id:	4.5V @ 1.3mA
Operating Temperature:	-55°C ~ 150°C (TJ)
Package / Case:	TO-220-3
Gate Charge (Qg) (Max) @ Vgs:	118 nC @ 10 V
Rds On (Max) @ Id, Vgs:	110mOhm @ 12.7A, 10V
FET Type:	N-Channel
Drive Voltage (Max Rds On, Min Rds On):	10V
Package:	Tube
Drain to Source Voltage (Vdss):	650 V
Vgs (Max):	±20V
Product Status:	Active
Input Capacitance (Ciss) (Max) @ Vds:	3240 pF @ 100 V
Mounting Type:	Through Hole
Series:	CoolMOS™ CFD2
Supplier Device Package:	PG-TO220-3
Mfr:	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C:	31.2A (Tc)
Power Dissipation (Max):	277.8W (Tc)
Technology:	MOSFET (Metal Oxide)
Base Product Number:	IPP65R110
Description:	MOSFET N-CH 650V 31.2A TO220-3

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Beijing Silk Road Enterprise Management Services Co.,LTD

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N-Channel 650 V 31.2A (Tc) 277.8W (Tc) Through Hole PG-TO220-3

Product Tags:

IP4220CZ6

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