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IQE050N08NM5ATMA1

Categories	Single FETs, MOSFETs
Category:	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature:	-
Vgs(th) (Max) @ Id:	3.8V @ 49µA
Operating Temperature:	-55°C ~ 175°C (TJ)
Package / Case:	8-PowerTDFN
Gate Charge (Qg) (Max) @ Vgs:	43.2 nC @ 10 V
Rds On (Max) @ Id, Vgs:	5mOhm @ 20A, 10V
FET Type:	N-Channel
Drive Voltage (Max Rds On, Min Rds On):	6V, 10V
Package:	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Drain to Source Voltage (Vdss):	80 V
Vgs (Max):	±20V
Product Status:	Active
Input Capacitance (Ciss) (Max) @ Vds:	2900 pF @ 40 V
Mounting Type:	Surface Mount
Series:	OptiMOS™
Supplier Device Package:	PG-TSON-8-4
Mfr:	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C:	16A (Ta), 101A (Tc)
Power Dissipation (Max):	2.5W (Ta), 100W (Tc)
Technology:	MOSFET (Metal Oxide)
Base Product Number:	IQE050N
Description:	TRENCH 40<-<100V PG-TSON-8

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Company Info.

Beijing Silk Road Enterprise Management Services Co.,LTD

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N-Channel 80 V 16A (Ta), 101A (Tc) 2.5W (Ta), 100W (Tc) Surface Mount PG-TSON-8-4

Product Tags:

IS0107

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