T2N7002AK,LM

Categories	Single FETs, MOSFETs
Category:	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature:	-
Vgs(th) (Max) @ Id:	2.1V @ 250µA
Operating Temperature:	150°C (TJ)
Package / Case:	TO-236-3, SC-59, SOT-23-3
Gate Charge (Qg) (Max) @ Vgs:	0.35 nC @ 4.5 V
Rds On (Max) @ Id, Vgs:	3.9Ohm @ 100mA, 10V
FET Type:	N-Channel
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Package:	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Drain to Source Voltage (Vdss):	60 V
Vgs (Max):	±20V
Product Status:	Active
Input Capacitance (Ciss) (Max) @ Vds:	17 pF @ 10 V
Mounting Type:	Surface Mount
Series:	U-MOSVII-H
Supplier Device Package:	SOT-23-3
Mfr:	Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C:	200mA (Ta)
Power Dissipation (Max):	320mW (Ta)
Technology:	MOSFET (Metal Oxide)
Base Product Number:	T2N7002
Description:	MOSFET N-CH 60V 200MA SOT23

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Beijing Silk Road Enterprise Management Services Co.,LTD

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N-Channel 60 V 200mA (Ta) 320mW (Ta) Surface Mount SOT-23-3

Product Tags:

KM681000ALP-7

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