IXTT220N20X4HV

Categories	Single FETs, MOSFETs
Category:	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature:	-
Vgs(th) (Max) @ Id:	4.5V @ 250µA
Operating Temperature:	-55°C ~ 175°C (TJ)
Package / Case:	TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Gate Charge (Qg) (Max) @ Vgs:	157 nC @ 10 V
Rds On (Max) @ Id, Vgs:	5.5mOhm @ 110A, 10V
FET Type:	N-Channel
Drive Voltage (Max Rds On, Min Rds On):	10V
Package:	Tube
Drain to Source Voltage (Vdss):	200 V
Vgs (Max):	±20V
Product Status:	Active
Input Capacitance (Ciss) (Max) @ Vds:	12300 pF @ 25 V
Mounting Type:	Surface Mount
Series:	Ultra X4
Supplier Device Package:	TO-268HV (IXTT)
Mfr:	IXYS
Current - Continuous Drain (Id) @ 25°C:	220A (Tc)
Power Dissipation (Max):	800W (Tc)
Technology:	MOSFET (Metal Oxide)
Base Product Number:	IXTT220
Description:	MOSFET N-CH 200V 220A X4 TO268HV

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Beijing Silk Road Enterprise Management Services Co.,LTD

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N-Channel 200 V 220A (Tc) 800W (Tc) Surface Mount TO-268HV (IXTT)

Product Tags:

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