IPP014N06NF2SAKMA2

Categories	Single FETs, MOSFETs
Category:	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:	305 nC @ 10 V
Product Status:	Active
Mounting Type:	Through Hole
Package:	Tube
Input Capacitance (Ciss) (Max) @ Vds:	13800 pF @ 30 V
Series:	StrongIRFET™
Vgs (Max):	±20V
Vgs(th) (Max) @ Id:	3.3V @ 246µA
Supplier Device Package:	PG-TO220-3-U05
Rds On (Max) @ Id, Vgs:	1.4mOhm @ 100A, 10V
Mfr:	Infineon Technologies
Operating Temperature:	-55°C ~ 175°C (TJ)
FET Type:	N-Channel
Drive Voltage (Max Rds On, Min Rds On):	6V, 10V
Power Dissipation (Max):	3.8W (Ta), 300W (Tc)
Package / Case:	TO-220-3
Drain to Source Voltage (Vdss):	60 V
Current - Continuous Drain (Id) @ 25°C:	39A (Ta), 198A (Tc)
Technology:	MOSFET (Metal Oxide)
FET Feature:	-
Description:	TRENCH 40<-<100V PG-TO220-3

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Beijing Silk Road Enterprise Management Services Co.,LTD

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N-Channel 60 V 39A (Ta), 198A (Tc) 3.8W (Ta), 300W (Tc) Through Hole PG-TO220-3-U05

Product Tags:

ISP1181ADGG

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