Home > Bracelets & Bangles >

IPP60R099CPXKSA1

Categories	Single FETs, MOSFETs
Category:	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature:	-
Vgs(th) (Max) @ Id:	3.5V @ 1.2mA
Operating Temperature:	-55°C ~ 150°C (TJ)
Package / Case:	TO-220-3
Gate Charge (Qg) (Max) @ Vgs:	80 nC @ 10 V
Rds On (Max) @ Id, Vgs:	99mOhm @ 18A, 10V
FET Type:	N-Channel
Drive Voltage (Max Rds On, Min Rds On):	10V
Package:	Tube
Drain to Source Voltage (Vdss):	650 V
Vgs (Max):	±20V
Product Status:	Not For New Designs
Input Capacitance (Ciss) (Max) @ Vds:	2800 pF @ 100 V
Mounting Type:	Through Hole
Series:	CoolMOS™
Supplier Device Package:	PG-TO220-3
Mfr:	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C:	31A (Tc)
Power Dissipation (Max):	255W (Tc)
Technology:	MOSFET (Metal Oxide)
Base Product Number:	IPP60R099
Description:	MOSFET N-CH 650V 31A TO220-3

Contact Now

Add to Cart

Company Info.

Beijing Silk Road Enterprise Management Services Co.,LTD

Verified Supplier

Haven't found right suppliers
Our buyer assistants can help you find the most suitable, 100% reliable suppliers from China.
And this service is free of charge.
we have buyer assistants who speak English, French, Spanish......and we are ready to help you anytime!

Submit Buying Request

N-Channel 650 V 31A (Tc) 255W (Tc) Through Hole PG-TO220-3

Product Tags:

IP4220CZ6

Send your message to this supplier


*From:	Your email address is incorrect!
*To:	Beijing Silk Road Enterprise Management Services Co.,LTD
*Subject:	Subject is empty!
*Message:	For the best results, we recommend including the following details: -Self introduction -Required specifications -Inquire about price/MOQ Characters Remaining: (0/3000) Please enter 20 to 3000 characters to contact this supplier!