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H30R1602 H20R1353 Throught Hole IGBT Transistor H15R1203 H30R1353

Categories N Mosfet Transistor
Place of Origin: US
Brand Name: Original
Model Number: IHW25N120R2FKSA1
Supply Ability: 859000PCS/Day
Packaging Details: Box/Reel/Tube
MOQ: 10
Price: $0.48 - $4.70 / Piece
Delivery Time: 1-7 days
Payment Terms: T/T, Western Union, Paypal,Alibaba trade order
Application: Amplifier
Supplier Type: Original manufacturer, Retailer
Media Available: Photo
Package Type: Throught Hole
Brand: IGBT 1200V 50A 365W TO247-3
Current - Collector (Ic) (Max): 50A
Voltage - Collector Emitter Breakdown (Max): 1200V
Power - Max: 365W
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3, TO-247
IGBT Type: NPT
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 25A
Type: Triode Transistor
Packaging: Tube
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Shipment method: DHL/UPS/Fedex/etc
Port: Shenzhen/Hongkong/Guangzhou
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H30R1602 H20R1353 Throught Hole IGBT Transistor H15R1203 H30R1353


Product Detail

CategoriesDiscrete Semiconductor Products
Transistors - IGBTs - Single
ManufacturerInfineon Technologies
Series-
PackagingTube
Part StatusObsolete
IGBT TypeNPT
Voltage - Collector Emitter Breakdown (Max)1200V
Current - Collector (Ic) (Max)50A
Current - Collector Pulsed (Icm)75A
Vce(on) (Max) @ Vge, Ic1.8V @ 15V, 25A
Power - Max365W
Switching Energy1.59mJ
Input TypeStandard
Gate Charge60.7nC
Td (on/off) @ 25°C-/324ns
Test Condition600V, 25A, 10Ohm, 15V
Operating Temperature-40°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackagePG-TO247-3

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