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IJW120R100T1

Categories JFET
Transistor Polarity :: N-Channel
Vgs - Gate-Source Breakdown Voltage :: 2 V
Product Category :: JFET
Mounting Style :: Through Hole
Drain-Source Current at Vgs=0 :: 26 A
Pd - Power Dissipation :: 190 W
Package / Case :: TO-247-3
Maximum Operating Temperature :: + 175 C
Vds - Drain-Source Breakdown Voltage :: 1200 V
Packaging :: Tube
Id - Continuous Drain Current :: 78 A
Series :: XJY120R100
Rds On - Drain-Source Resistance :: 100 mOhms
Manufacturer :: Infineon Technologies
Description: JFET SIC CHIP/DISCRETE
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IJW120R100T1

The IJW120R100T1,from Infineon Technologies,is JFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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