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Product Category :: MOSFET
Vgs (Max) :: ±20V
Current - Continuous Drain (Id) @ 25°C :: 80A (Tc)
FET Type :: N-Channel
Mounting Type :: Through Hole
Gate Charge (Qg) (Max) @ Vgs :: 93nC @ 10V
Manufacturer :: Infineon Technologies
Minimum Quantity :: 500
Drive Voltage (Max Rds On, Min Rds On) :: 10V
Operating Temperature :: -55°C ~ 175°C (TJ)
FET Feature :: -
Series :: OptiMOS™
Input Capacitance (Ciss) (Max) @ Vds :: 3500pF @ 30V
Supplier Device Package :: PG-TO220-3-1
Part Status :: Obsolete
Packaging :: Tube
Rds On (Max) @ Id, Vgs :: 8 mOhm @ 80A, 10V
Power Dissipation (Max) :: 214W (Tc)
Package / Case :: TO-220-3
Technology :: MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id :: 4V @ 150µA
Drain to Source Voltage (Vdss) :: 60V
Description: MOSFET N-CH 60V 80A TO-220
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IPP080N06N G

The IPP080N06N G,from Infineon Technologies,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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