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IPA65R190E6XKSA1

Categories MOSFET
Product Category :: MOSFET
Vgs (Max) :: ±20V
Current - Continuous Drain (Id) @ 25°C :: 20.2A (Tc)
FET Type :: N-Channel
Mounting Type :: Through Hole
Gate Charge (Qg) (Max) @ Vgs :: 73nC @ 10V
Manufacturer :: Infineon Technologies
Minimum Quantity :: 500
Drive Voltage (Max Rds On, Min Rds On) :: 10V
Operating Temperature :: -55°C ~ 150°C (TJ)
FET Feature :: -
Series :: CoolMOS™
Input Capacitance (Ciss) (Max) @ Vds :: 1620pF @ 100V
Supplier Device Package :: PG-TO220 Full Pack
Part Status :: Active
Packaging :: Tube
Rds On (Max) @ Id, Vgs :: 190 mOhm @ 7.3A, 10V
Power Dissipation (Max) :: 34W (Tc)
Package / Case :: TO-220-3 Full Pack
Technology :: MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id :: 3.5V @ 730µA
Drain to Source Voltage (Vdss) :: 650V
Description: MOSFET N-CH 650V 20.2A TO220
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IPA65R190E6XKSA1

The IPA65R190E6XKSA1,from Infineon Technologies,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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