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IPP16CN10NGHKSA1

IPP16CN10NGHKSA1
Categories MOSFET
Product Category :: MOSFET
Vgs (Max) :: ±20V
Current - Continuous Drain (Id) @ 25°C :: 53A (Tc)
FET Type :: N-Channel
Mounting Type :: Through Hole
Gate Charge (Qg) (Max) @ Vgs :: 48nC @ 10V
Manufacturer :: Infineon Technologies
Minimum Quantity :: 500
Drive Voltage (Max Rds On, Min Rds On) :: 10V
Operating Temperature :: -55°C ~ 175°C (TJ)
FET Feature :: -
Series :: OptiMOS™
Input Capacitance (Ciss) (Max) @ Vds :: 3220pF @ 50V
Supplier Device Package :: PG-TO-220-3
Part Status :: Not For New Designs
Packaging :: Tube
Rds On (Max) @ Id, Vgs :: 16.5 mOhm @ 53A, 10V
Power Dissipation (Max) :: 100W (Tc)
Package / Case :: TO-220-3
Technology :: MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id :: 4V @ 61µA
Drain to Source Voltage (Vdss) :: 100V
Description: MOSFET N-CH 100V TO-220
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IPP16CN10NGHKSA1

The IPP16CN10NGHKSA1,from Infineon Technologies,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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