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SQJQ900E-T1_GE3

SQJQ900E-T1_GE3
Categories MOSFET
Transistor Polarity :: N-Channel
Technology :: Si
Id - Continuous Drain Current :: 100 A, 100 A
Mounting Style :: SMD/SMT
Minimum Operating Temperature :: - 55 C
Package / Case :: PowerPAK-8x8L-4
Maximum Operating Temperature :: + 175 C
Channel Mode :: Enhancement
Vds - Drain-Source Breakdown Voltage :: 40 V, 40 V
Packaging :: Reel
Vgs th - Gate-Source Threshold Voltage :: 1.5 V, 1.5 V
Product Category :: MOSFET
Rds On - Drain-Source Resistance :: 3.4 mOhms, 3.4 mOhms
Number of Channels :: 2 Channel
Vgs - Gate-Source Voltage :: +/- 20 V, +/- 20 V
Qg - Gate Charge :: 120 nC, 120 nC
Manufacturer :: Siliconix / Vishay
Description: MOSFET N Ch 40Vds 20Vgs AEC-Q101 Qualified
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SQJQ900E-T1_GE3

The SQJQ900E-T1_GE3,from Siliconix / Vishay,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
Product Tags:

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