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Product Category :: MOSFET
Vgs (Max) :: ±20V
Current - Continuous Drain (Id) @ 25°C :: 21A (Tc)
FET Type :: N-Channel
Mounting Type :: Through Hole
Gate Charge (Qg) (Max) @ Vgs :: -
Manufacturer :: Infineon Technologies
Minimum Quantity :: 1
Drive Voltage (Max Rds On, Min Rds On) :: 10V
Operating Temperature :: -55°C ~ 150°C (TJ)
FET Feature :: -
Series :: SIPMOS®
Input Capacitance (Ciss) (Max) @ Vds :: 1900pF @ 25V
Supplier Device Package :: PG-TO-220-3
Part Status :: Not For New Designs
Packaging :: Tube
Rds On (Max) @ Id, Vgs :: 130 mOhm @ 13.5A, 10V
Power Dissipation (Max) :: 125W (Tc)
Package / Case :: TO-220-3
Technology :: MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id :: 4V @ 1mA
Drain to Source Voltage (Vdss) :: 200V
Description: MOSFET N-CH 200V 21A TO220-3
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BUZ30AHXKSA1

The BUZ30AHXKSA1,from Infineon Technologies,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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