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CSD25211W1015

Categories MOSFET
Product Category :: MOSFET
Vgs (Max) :: -6V
Current - Continuous Drain (Id) @ 25°C :: 3.2A (Ta)
FET Type :: P-Channel
Mounting Type :: Surface Mount
Gate Charge (Qg) (Max) @ Vgs :: 4.1nC @ 4.5V
Manufacturer :: Texas instruments
Minimum Quantity :: 3000
Drive Voltage (Max Rds On, Min Rds On) :: 2.5V, 4.5V
Operating Temperature :: -55°C ~ 150°C (TJ)
FET Feature :: -
Series :: NexFET™
Input Capacitance (Ciss) (Max) @ Vds :: 570pF @ 10V
Supplier Device Package :: 6-DSBGA (1x1.5)
Part Status :: Active
Packaging :: Tape & Reel (TR)
Rds On (Max) @ Id, Vgs :: 33 mOhm @ 1.5A, 4.5V
Power Dissipation (Max) :: 1W (Ta)
Package / Case :: 6-UFBGA, DSBGA
Technology :: MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id :: 1.1V @ 250µA
Drain to Source Voltage (Vdss) :: 20V
Description: MOSFET P-CH 20V 3.2A 6DSBGA
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CSD25211W1015

The CSD25211W1015,from Texas instruments,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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