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DMN61D8LVTQ-13

Categories MOSFET
Supplier Device Package :: TSOT-26
Product Category :: MOSFET
Minimum Quantity :: 10000
Input Capacitance (Ciss) (Max) @ Vds :: 12.9pF @ 12V
Package / Case :: SOT-23-6 Thin, TSOT-23-6
Part Status :: Active
Current - Continuous Drain (Id) @ 25°C :: 630mA
Packaging :: Tape & Reel (TR)
Operating Temperature :: -55°C ~ 150°C (TJ)
FET Type :: 2 N-Channel (Dual)
FET Feature :: Logic Level Gate
Drain to Source Voltage (Vdss) :: 60V
Mounting Type :: Surface Mount
Gate Charge (Qg) (Max) @ Vgs :: 0.74nC @ 5V
Rds On (Max) @ Id, Vgs :: 1.8 Ohm @ 150mA, 5V
Power - Max :: 820mW
Vgs(th) (Max) @ Id :: 2V @ 1mA
Series :: -
Manufacturer :: Diodes Incorporated
Description: MOSFET 2N-CH 60V 0.63A TSOT26
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DMN61D8LVTQ-13

The DMN61D8LVTQ-13,from Diodes Incorporated,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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