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Categories IGBT Transistors
Gate-Emitter Leakage Current :: 200 nA
Product Category :: IGBT Transistors
Mounting Style :: Through Hole
Continuous Collector Current at 25 C :: 170 A
Pd - Power Dissipation :: 830 W
Collector- Emitter Voltage VCEO Max :: 1.7 kV
Package / Case :: PLUS 247-3
Maximum Operating Temperature :: + 150 C
Maximum Gate Emitter Voltage :: +/- 20 V
Packaging :: Tube
Configuration :: Single
Collector-Emitter Saturation Voltage :: 2.5 V
Manufacturer :: IXYS
Description: IGBT Transistors HIGH VOLT NPT IGBTS 1700V 100A
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IXGX100N170

The IXGX100N170,from IXYS,is IGBT Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
Product Tags:

XCS05

  

TMS320F28235PGFA

  

XC6SLX100T-2FGG900I

  
Buy IXGX100N170 at wholesale prices
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