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STGW30H60DFB

Categories IGBT Transistors
Gate-Emitter Leakage Current :: 250 nA
Product Category :: IGBT Transistors
Mounting Style :: Through Hole
Continuous Collector Current at 25 C :: 60 A
Pd - Power Dissipation :: 260 W
Collector- Emitter Voltage VCEO Max :: 600 V
Package / Case :: TO-247-3
Maximum Operating Temperature :: + 175 C
Maximum Gate Emitter Voltage :: 20 V
Packaging :: Tube
Configuration :: Single
Collector-Emitter Saturation Voltage :: 1.55 V
Manufacturer :: STMicroelectronics
Description: IGBT Transistors IGBT & Power Bipolar
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STGW30H60DFB

The STGW30H60DFB,from STMicroelectronics,is IGBT Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
Product Tags:

L6920

  

L6703

  

L9822

  
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