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APT50GN60BDQ2G

APT50GN60BDQ2G
Categories IGBT Transistors
Gate-Emitter Leakage Current :: 600 nA
Product Category :: IGBT Transistors
Mounting Style :: Through Hole
Continuous Collector Current at 25 C :: 107 A
Pd - Power Dissipation :: 366 W
Collector- Emitter Voltage VCEO Max :: 600 V
Package / Case :: TO-247-3
Maximum Operating Temperature :: + 175 C
Maximum Gate Emitter Voltage :: 30 V
Packaging :: Tube
Configuration :: Single
Collector-Emitter Saturation Voltage :: 1.5 V
Manufacturer :: Microsemi
Description: IGBT Transistors Insulated Gate Bipolar Transistor - Fieldstop Low Freq - Combi
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APT50GN60BDQ2G

The APT50GN60BDQ2G,from Microsemi,is IGBT Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
Product Tags:

OPA2348AIDCNT

  

XC2C64A-7QFG48C

  

XC2C64A-7CPG56I

  
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