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Categories IGBT Transistors
Gate-Emitter Leakage Current :: 100 nA
Product Category :: IGBT Transistors
Mounting Style :: Through Hole
Continuous Collector Current at 25 C :: 44 A
Pd - Power Dissipation :: 200 W
Collector- Emitter Voltage VCEO Max :: 1.7 kV
Package / Case :: ISOPLUS i4-Pak-3
Maximum Operating Temperature :: + 150 C
Maximum Gate Emitter Voltage :: +/- 20 V
Packaging :: Tube
Configuration :: Single
Collector-Emitter Saturation Voltage :: 2.7 V
Manufacturer :: IXYS
Description: IGBT Transistors 26 Amps 1700V 3.5 V Rds
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IXGF32N170

The IXGF32N170,from IXYS,is IGBT Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
Product Tags:

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XTR115UA

  
Buy IXGF32N170 at wholesale prices
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