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IRGP4660DPBF

Categories IGBT Transistors
Gate-Emitter Leakage Current :: 70 uA
Product Category :: IGBT Transistors
Mounting Style :: Through Hole
Continuous Collector Current at 25 C :: 50 A
Pd - Power Dissipation :: 134 W
Collector- Emitter Voltage VCEO Max :: 600 V
Package / Case :: TO-247-3
Maximum Operating Temperature :: + 175 C
Packaging :: Tube
Maximum Gate Emitter Voltage :: 20 V
Collector-Emitter Saturation Voltage :: 1.9 V
Manufacturer :: IR / Infineon
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IRGP4660DPBF

The IRGP4660DPBF,from IR / Infineon,is IGBT Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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