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IRG8P25N120KD-EPBF

Categories IGBT Transistors
Gate-Emitter Leakage Current :: 100 nA
Product Category :: IGBT Transistors
Mounting Style :: Through Hole
Continuous Collector Current at 25 C :: 40 A
Pd - Power Dissipation :: 180 W
Collector- Emitter Voltage VCEO Max :: 1200 V
Package / Case :: TO-247AD-3
Maximum Operating Temperature :: + 150 C
Maximum Gate Emitter Voltage :: 30 V
Packaging :: Tube
Configuration :: Single
Collector-Emitter Saturation Voltage :: 1.7 V
Manufacturer :: IR / Infineon
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IRG8P25N120KD-EPBF

The IRG8P25N120KD-EPBF,from IR / Infineon,is IGBT Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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